n2206 / 41006hkim no.0004-1/6 sr10300 series overview the sr10300 series is a sanyo?s original sip (s ystem i n p ackage) that includes a dc/dc converter control ic, a power mosfet and a schottky barrier diode. all these components are mounted into one thin-and-small package by utilizing sanyo?s high-dens ity mounting technology, ?i ntegrated s ystem in b oard (isb)?. the advantage using this dc/dc converter package is that it greatly decreases its mounting area and space, compared with when the same circuit is set up with the discrete devi ces. in addition to that, it is very easy to assemble step-up switching power supply with by just adding vo ltage-setting resistance, inductor and capacitors. functions and features ? since the sr10300 series packages a voltage step-up dc/dc converter ic as well as power mosfet and schottky barrier diode devices in the same package with the mini mum trace length between components, it can provides high efficiency and superior characteristics including low output ripple. in particular the mounting area required by these components is reduced when compared to implementations using discrete devices. ? the output voltage is set using an external resistor. ? standby function: standby mode current=1 a (maximum) ? external pwm/pfm switching control ? oscillator frequency: 100kh z (sr10310), 180khz (SR10320), 300khz (s r10330) (accuracy 15%) ordering number : eisb*0004 ultrathin miniature package 1-channel step-up dc/dc converter ics any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
sr10300 series no.0004-2/6 comparison of functions dc/dc controller ic tr maximum rating di maximum rating type no. control system input voltage range oscillator frequency v dss i d v rrm i o output setting *1 sr10310 external pwm/pfm switching control 0.9v to 10v 100khz 20v 3a 30v 1a 1.5v to 13v SR10320 external pwm/pfm switching control 0.9v to 10v 180khz 20v 3a 30v 1a 1.5v to 13v sr10330 external pwm/pfm switching control 0.9v to 10v 300khz 20v 3a 30v 1a 1.5v to 13v *1: the output setting maximum values are voltages that are 1/1.5 times the v dss and v rrm as a general rule of thumb, and they are provided to serve as a reference only. as such, it must be verified during actual operation that they do not exceed the rated voltages. package dimensions unit : mm 3.09 0.75 2.8 0.275 0.51 0.37 0.58 0.65 1.545 1.4 0.285 0.63 0.63 0.63 0.63 0.14 0.1 12345 13 14 15 16 789 17 11 12 6 10 18 19 20 21 22 0.5 min 0.3
sr10300 series no.0004-3/6 pin layout and internal equi valent circuit block diagram specifications absolute maximum ratings at ta = 25 c device parameter symbol conditions ratings unit v dd pin voltage v dd -0.3 to +12 v fb pin voltage vfb -0.3 to +12 v ce pin voltage v ce -0.3 to +12 v ext pin voltage vext -0.3 to v dd +0.3 v ic ext pin current iext 100 ma drain-to-source voltage v dss 20 v gate-to-source voltage v gss 10 v drain current i d 3a tr allowable power dissipation p d -t 60mm 60mm 1.6mm 3 fr4 board tbd mw reverse voltage v rrm 30 v output current i o 1a di allowable power dissipation p d -d 60mm 60mm 1.6mm 3 fr4 board tbd mw operating temperature topr -30 to +85 c storage temperature tstg -40 to +125 c di tr ce gnd ext ic fb v dd 6 1 11 10 2, 3, 4, 7 8, 9, 12 16, 17, 21, 22 15 13, 14 18, 19, 20
sr10300 series no.0004-4/6 electrical characteristics overall operating characteristics at ta = 25 c, in the specified test circuit ratings parameter symbol conditions min typ max unit output voltage v out v in =2v, i o =10ma 3.217 3.300 3.383 v output voltage setting range voset v in =voset 0.6, v dd =3.3v, i out =10ma 1.5 13 *2 v fb control voltage vfb 0.9 v supply voltage v dd *3 1.8 10 v operation start voltage vst i o =1ma 0.9 v v in =2v, i o =0ma sr10310 29 41 a v in =2v, i o =0ma SR10320 45 64 a current dissipation i dd v in =2v, i o =0ma sr10330 62 88 a standby current istb v in =2v, v ce =0v 1 a v in =2v, i o =10ma sr10310 85 100 115 khz v in =2v, i o =10ma SR10320 153 180 207 khz oscillator frequency f osc v in =2v, i o =10ma sr10330 255 300 345 khz efficiency effi 81 % ce high voltage vceh 0.65 v ce low voltage vcel 0.20 v pwm high voltage vpwmh *4 v dd -0.2 v pwm low voltage vpwml *4 v dd -1.0 v ce high current iceh ce=v dd =3.3v 0.1 a ce low current icel ce=0v 0.1 a *2: the output setting maximum voltages are within 1/1.5 times the v dss of the built-in mosfet and within 1/1.5 times the v rrm of the di as a general rule of thumb. as such, it must be verified during actual operation that they do not exceed the rated voltages. *3: v dd should be 1.8v or higher when v in or other power source is supplying v dd since the output voltage and oscillating frequency become steady when v dd is set 1.8v or higher, although th e built-in ic starts step-up voltage operation from v dd =0.8v. *4: the ce pin also serves to implement a pwm/pfm external switching function. when the voltage is v dd -0.2v or more, pwm control is exercised, and when it is vceh or more but v dd -1.0v or less, pwm/pfm automatic switching at a duty ratio of 25% is controlled. di characteristics at ta = 25 c, in the specified test circuit parameter symbol conditions min typ max unit forward voltage vf if=1a 0.43 0.47 v reverse current ir vr=30v 40 200 a pin functions pin no. pin name description 1 ic ce/pwm operation starts when chip-enable pin is set ?high?. this pin also serves as a pwm/pfm selector. 2, 3, 4, 7, 8, 9, 12 ic v dd supply voltage for ic 5 nc 6 gnd ground pin for ic 10 ic fb external resistance connecting pin for output voltage setting, internal control voltage: 0.9v typical 11 tr source source pin for tr 13, 14, 18,19, 20 tr drain, di anode drain of tr and anode of diode 15 ic ext, tr gate gate for tr 16, 17, 21, 22 di cathode cathode of diode and v out
sr10300 series no.0004-5/6 equivalent circuit and test peripheral circuitry selection rules of external components 1) rfb: set the ratio of rfb1 and rfb2 to be rfb1+rfb2 2m ? and vfb=0.9v. 2) cfb: set fzfb=1/(2 cfb rfb1) to be within 5khz to 30khz. 3) l, co, rsense: when ceramic capacitor is used for co: l=10 h, co=10 f (sr10330) l=22 h, co=10 f (sr10310, SR10320) rsense=50m ? (sr10310), 100m ? (r10320, sr10330) when tantalum capacitor is used for co: l=22 h, co=47 f (sr10330) l=47 h, co=47 f (sr10310, SR10320) rsense=none (shorted) when electrolytic capacitor is used for co: l=22 h, co=100 f//2.2 f ceramic (sr10330) l=47 h, co=100 f//2.2 f ceramic (sr10310, SR10320) rsense=none (shorted) these constants of the components above should be changed if necessary for larger step-up ratio v out /v in and larger output current i out using the expression shown below as a reference. co=(standard co*) (i out (ma) / 300ma v out /v in ) * standard co: values shown above di tr 120k ? 68pf vout v in ce gnd ext ic i in a 45k ? 22 f l v dd 10f v sr10300 series co rfb1 rfb2 cfb c in v ce rsense 100m ?
sr10300 series no.0004-6/6 ps isb business unit, electronic device company, component & device group, sanyo electric co., ltd. specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of april, 2006. specifications and information herein are subject to change without notice.
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